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TYPICAL PERFORMANCE CURVES
APT25GP90B
APT25GP90B
900V
POWER MOS 7 IGBT
(R)
TO-247
The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
(R)
G
C
* Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol VCES VGE VGEM IC1 IC2 ICM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient
* 100 kHz operation @ 600V, 21A * 50 kHz operation @ 600V, 33A * SSOA Rated
E
C G E
All Ratings: TC = 25C unless otherwise specified.
APT25GP90B UNIT
900 20 30 72 36 110 110A @ 900V 417 -55 to 150 300
Watts C Amps Volts
Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
@ TC = 150C
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250A) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX UNIT
900 3 4.5 3.2 2.7 250
A nA
7-2004 050-7477 Rev D
6 3.9
Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 125C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25C)
2 2
Volts
I CES I GES
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V)
1000 100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Symbol RJC RJC WT Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
1 APT25GP90B
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 450V I C = 25A TJ = 150C, R G = 5, VGE = 15V, L = 100H,VCE = 900V Inductive Switching (25C) VCC = 600V VGE = 15V I C = 25A
4 5
MIN
TYP
MAX
UNIT pF V nC A
2100 220 40 7.5 110 16 47 110 13 16 55 55 TBD 740 370 13 16 95 95 TBD 1120 750
MIN TYP MAX UNIT C/W gm ns ns
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight
44 55
R G = 5 TJ = +25C
Turn-on Switching Energy (Diode)
6
J
Inductive Switching (125C) VCC = 600V VGE = 15V I C = 25A R G = 5 TJ = +125C
Turn-on Switching Energy (Diode)
66
J
THERMAL AND MECHANICAL CHARACTERISTICS .30 N/A 5.90
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7477
Rev D
7-2004
TYPICAL PERFORMANCE CURVES
100
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
100
APT25GP90B
VGE = 10V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC, COLLECTOR CURRENT (A)
60
IC, COLLECTOR CURRENT (A)
80
80
TC = 125C TC = -50C TC = 25C
60 TC = 125C 40 TC = -50C
40
20
20
TC = 25C
0
0 1 2 3 4 5 6 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
0
0 1 2 3 4 5 6 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
IC = 25A TJ = 25C
FIGURE 1, Output Characteristics(VGE = 15V) 120
VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST <0.5 % DUTY CYCLE
FIGURE 2, Output Characteristics (VGE = 10V) 16 14 12 10 8 6 4 2 0 0 20 40 60 80 100 GATE CHARGE (nC) FIGURE 4, Gate Charge 120 VCE = 720V
IC, COLLECTOR CURRENT (A)
100 80 60 40 20 0 TJ = -55C TJ = 25C TJ = 125C
VCE = 180V VCE = 450V
0
2 4 6 8 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
5 4
IC = 25A
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
6
4 3.5 3 2.5 2 1.5 1 0.5 0 25
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC = 50A IC = 25A
IC = 50A 3 2 1 0 IC = 12.5A
IC = 12.5A
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.10
6
50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 100
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
IC, DC COLLECTOR CURRENT(A)
1.05
80
60
1.00
40
7-2004
0.95
20
050-7477
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
0.90 -50
0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature
0 -50
-25
Rev D
18
td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
100
VGE =15V,TJ=125C
APT25GP90B
16 14 12 10 8 6 4 2 0
VCE = 600V TJ = 25C, TJ =125C RG = 5 L = 100 H
VGE = 15V
80
60
VGE =15V,TJ=25C
40
20
10 20 30 40 50 60 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 50
RG = 5, L = 100H, VCE = 600V
10 20 30 40 50 60 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 120 100
tf, FALL TIME (ns)
RG = 5, L = 100H, VCE = 600V
0
VCE = 600V RG = 5 L = 100 H
40
tr, RISE TIME (ns)
80 60 40 20 0
TJ = 125C, VGE = 15V
30
20
TJ = 25 or 125C,VGE = 15V
TJ = 25C, VGE = 15V
10
10 20 30 40 50 60 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 3000
EON2, TURN ON ENERGY LOSS (J)
VCE = 600V VGE = +15V RG = 5
0
10 20 30 40 50 60 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 2500
EOFF, TURN OFF ENERGY LOSS (J)
VCE = 600V VGE = +15V RG = 5
2500 2000 1500 1000 500
TJ = 125C,VGE =15V
2000
TJ = 125C, VGE = 15V
1500
1000
500
TJ = 25C,VGE =15V
TJ = 25C, VGE = 15V
10 20 30 40 50 60 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 4000
SWITCHING ENERGY LOSSES (J)
VCE = 600V VGE = +15V TJ = 125C
0
10 20 30 40 50 60 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 3000
SWITCHING ENERGY LOSSES (J)
VCE = 600V VGE = +15V RG = 5
0
3500 3000 2500 2000 1500 1000 500
Eon2, 50A
2500 2000 1500
Eon2,50A
Eoff, 50A
Eoff, 50A Eon2, 25A Eoff, 25A Eoff, 12.5A 0 Eon2, 12.5A
Eon2,25A 1000 500 Eoff,25A 0
7-2004
Rev D
Eon2,12.5A Eoff, 12.5A
050-7477
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
TYPICAL PERFORMANCE CURVES
5,000
IC, COLLECTOR CURRENT (A)
120 Cies 100 80 60 40 20 0
APT25GP90B
C, CAPACITANCE ( F)
1,000 500 Coes 100 50 Cres
P
0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
10
200 400 600 800 1000 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18, Minimim Switching Safe Operating Area
0
0.35 0.30 0.25 0.7 0.20 0.15 0.10 0.05 0 0.5 Note:
PDM t1 t2
ZJC, THERMAL IMPEDANCE (C/W)
0.9
0.3 SINGLE PULSE 10-4
0.1 0.05 10-5
Peak TJ = PDM x ZJC + TC
Duty Factor D = t1/t2
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
RC MODEL Junction temp (C) 0.131 Power (watts) 0.168 Case temperature(C) 0.154F 0.00852F
270
FMAX, OPERATING FREQUENCY (kHz)
100 50
Fmax = min(f max1 , f max 2 ) f max1 = f max 2 = Pdiss = 0.05 t d (on) + t r + t d(off ) + t f Pdiss - Pcond E on 2 + E off
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
5 15 25 35 45 55 65 75 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
10
TJ = 125C TC = 75C D = 50 % VCE = 600V RG = 5
TJ - TC R JC
050-7477
Rev D
7-2004
APT25GP90B
Gate Voltage
APT15DF100
10% TJ = 125C td(on) Drain Current tr 90% 5% 10% DrainVoltage 5%
V CC
IC
V CE
A
Switching Energy
D.U.T.
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
VTEST
90% Gate Voltage td(off) 90% DrainVoltage
*DRIVER SAME TYPE AS D.U.T.
TJ = 125C
A V CE 100uH IC V CLAMP A DRIVER* D.U.T. B
tf
10%
0 Drain Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, EON1 Test Circuit
T0-247 Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
Fmax =2.87 (.113) , f max 2 ) min(f max1 0.05 f max1 = (.065) 1.65 t d (.084) 2.13(on ) + t r + t d(off ) + t f f max 2 = Pdiss Pdiss Gate - Pcond Collector E +E
Emitter
on 2 off
3.12 (.123)
7-2004
19.81 (.780) 20.32 (.800)
1.01 (.040) 1.40 (.055)
Rev D
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
T - TC =J R JC
050-7477
Dimensions in Millimeters and (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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